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ZXMN4A06G
Electrical Characteristics (@T A = +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
BV DSS
I DSS
I GSS
40
?
?
?
?
?
?
1
? 100
V
μA
nA
I D = 250μA, V GS = 0V
V DS = 40V, V GS = 0V
V GS = ? 20V, V DS = 0V
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-Resistance (Note 9)
Forward Transconductance (Notes 11)
Diode Forward Voltage (Note 9)
Reverse recovery time (Note 11)
Reverse recovery charge (Note 11)
V GS(th)
R DS(ON)
g fs
V SD
t rr
Q rr
1
?
?
?
?
?
?
?
8.7
0.8
19.86
16.36
2
0.05
0.075
?
0.95
?
?
V
?
S
V
ns
nC
I D = 250 ? A, V DS = V GS
V GS = 10V, I D = 4.5A
V GS = 4.5V, I D = 3.2A
V DS = 15V, I D = 2.5A
I S = 2.5A, V GS = 0V, T J = +25°C
I F = 2.5A, di/dt = 100A/μs,
T J = +25°C
DYNAMIC CHARACTERISTICS (Note 10)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge (Note 11)
Gate-Source Charge (Note 11)
Gate-Drain Charge (Note 11)
Turn-On Delay Time (Note 11)
Turn-On Rise Time (Note 11)
Turn-Off Delay Time (Note 11)
Turn-Off Fall Time (Note 11)
C iss
C oss
C rss
Q g
Q gs
Q gd
t D(on)
t r
t D(off)
t f
?
?
?
?
?
?
?
?
?
?
770
92
61
18.2
2.1
4.5
2.55
4.45
28.61
7.35
?
?
?
?
?
?
?
?
?
?
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
V DS = 40V, V GS = 0V
f = 1MHz
V DS = 30V, V GS = 10V,
I D = 2.5A (refer to test circuit)
V DD = 30V, V GS = 10V
I D = 2.5A, R G ? 6 ?
(refer to test circuit)
Notes:
9. Measured under pulsed conditions. Pulse width ? 300μs; duty cycle ? 2%.
10. Switching characteristics are independent of operating junction temperatures.
11. For design aid only, not subject to production testing.
ZXMN4A06G
Document number: DS33545 Rev. 3 - 2
3 of 7
www.diodes.com
January 2014
? Diodes Incorporated
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